STGP10H60DF

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Mfr.Part #
STGP10H60DF
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 20A 115W TO220
Stock
193
In Stock :
193

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Lead Free :
Lead Free
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
600V
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Package / Case :
TO-220-3
Radiation Hardening :
No
Width :
4.6mm
Factory Lead Time :
20 Weeks
RoHS Status :
ROHS3 Compliant
IGBT Type :
Trench Field Stop
Switching Energy :
83μJ (on), 140μJ (off)
Number of Pins :
3
Collector Emitter Saturation Voltage :
1.5V
Packaging :
Tube
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Test Condition :
400V, 10A, 10 Ω, 15V
Collector Emitter Breakdown Voltage :
600V
Power - Max :
115W
Operating Temperature :
-55°C~175°C TJ
Height :
15.75mm
Length :
10.4mm
Gate Charge :
57nC
Vce(on) (Max) @ Vge, Ic :
1.95V @ 15V, 10A
Element Configuration :
Single
Mounting Type :
Through Hole
Current - Collector Pulsed (Icm) :
40A
Base Part Number :
STGP10
Max Collector Current :
20A
Weight :
6.000006g
Max Power Dissipation :
115W
Mount :
Through Hole
Reverse Recovery Time :
107 ns
Input Type :
Standard
Td (on/off) @ 25°C :
19.5ns/103ns
Datasheets
STGP10H60DF
Introducing Transistors - IGBTs - Single STMicroelectronics STGP10H60DF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Base Part Number:STGP10, STGP10H60DF pinout, STGP10H60DF datasheet PDF, STGP10H60DF amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGP10H60DF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGP10H60DF


STGP10H60DF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGP10H60DF  Description


These devices STGP10H60DF   are IGBT developed using advanced proprietary trench gate field barrier structure. These devices are part of the H-series IGBT, and the IGBT represents the best tradeoff between turn-on loss and switching loss to maximize the efficiency of high-switching converters. In addition, a slightly positive VCE (Sat) temperature coefficient and a very tight parameter distribution make parallel operation safer.



STGP10H60DF  Features


? High speed switching

? Tight parameters distribution

? Safe paralleling

? Low thermal resistance

? Short-circuit rated

? Ultrafast soft recovery antiparallel diode


STGP10H60DF  Applications


? Motor control

? UPS

? PFC



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