STGP10NC60KD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2V

Length :

10.4mm

Gate Charge :

19nC

Mounting Type :

Through Hole

Max Power Dissipation :

65W

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Gate-Emitter Thr Voltage-Max :

7V

Collector Emitter Voltage (VCEO) :

600V

Current Rating :

20A

Rise Time :

6ns

Radiation Hardening :

No

Td (on/off) @ 25°C :

17ns/72ns

Number of Elements :

1

Package / Case :

TO-220-3

Width :

4.6mm

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Turn Off Time-Nom (toff) :

242 ns

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Switching Energy :

55μJ (on), 85μJ (off)

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Series :

PowerMESH™

Power Dissipation :

25W

Current - Collector Pulsed (Icm) :

30A

Reverse Recovery Time :

22 ns

Gate-Emitter Voltage-Max :

20V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Test Condition :

390V, 5A, 10 Ω, 15V

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

8 Weeks

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A

Transistor Element Material :

SILICON

Packaging :

Tube

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Collector Current :

20A

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Voltage - Rated DC :

600V

Case Connection :

Isolated

Turn On Time :

23 ns

Height :

9.15mm

Transistor Application :

POWER CONTROL

Mount :

Through Hole

Base Part Number :

STGP10