STGP10NB60S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Lead Free :

Lead Free

Number of Pins :

3

Pin Count :

3

Number of Terminations :

3

Continuous Collector Current :

10A

Turn On Delay Time :

7 µs

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Td (on/off) @ 25°C :

700ns/1.2μs

Power Dissipation :

80W

JEDEC-95 Code :

TO-220AB

Max Collector Current :

29A

Transistor Application :

POWER CONTROL

Terminal Finish :

Matte Tin (Sn) - annealed

Polarity/Channel Type :

N-Channel

Collector Emitter Saturation Voltage :

1.7V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Length :

10.4mm

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Gate Charge :

33nC

Height :

9.15mm

JESD-609 Code :

e3

Current - Collector Pulsed (Icm) :

80A

Vce(on) (Max) @ Vge, Ic :

1.75V @ 15V, 10A

Gate-Emitter Voltage-Max :

20V

Series :

PowerMESH™

Transistor Element Material :

SILICON

Base Part Number :

STGP10

Voltage - Rated DC :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Weight :

6.000006g

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Element Configuration :

Single

Test Condition :

480V, 10A, 1k Ω, 15V

Gate-Emitter Thr Voltage-Max :

5V

Max Power Dissipation :

80W

Package / Case :

TO-220-3

Current Rating :

10A

Collector Emitter Voltage (VCEO) :

600V

Mount :

Through Hole

Switching Energy :

600μJ (on), 5mJ (off)

Number of Elements :

1

Turn Off Time-Nom (toff) :

3100 ns

Width :

4.6mm

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

1160 ns

Continuous Drain Current (ID) :

10A