STGP10M65DF2

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Mfr.Part #
STGP10M65DF2
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 650V 10A TO-220AB
Stock
11,173
In Stock :
11,173

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Package / Case :
TO-220-3
Switching Energy :
120μJ (on), 270μJ (off)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
650V
Base Part Number :
STGP10
RoHS Status :
ROHS3 Compliant
Reverse Recovery Time :
96 ns
Input Type :
Standard
Operating Temperature :
-55°C~175°C TJ
Element Configuration :
Single
Collector Emitter Saturation Voltage :
1.55V
Test Condition :
400V, 10A, 22 Ω, 15V
Current - Collector Pulsed (Icm) :
40A
Power - Max :
115W
Max Power Dissipation :
115W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mount :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Number of Pins :
3
Td (on/off) @ 25°C :
19ns/91ns
Max Collector Current :
20A
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 10A
Mounting Type :
Through Hole
Factory Lead Time :
30 Weeks
REACH SVHC :
No SVHC
IGBT Type :
Trench Field Stop
Packaging :
Tube
Gate Charge :
28nC
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
2V
Datasheets
STGP10M65DF2
Introducing Transistors - IGBTs - Single STMicroelectronics STGP10M65DF2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Base Part Number:STGP10, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Through Hole, STGP10M65DF2 pinout, STGP10M65DF2 datasheet PDF, STGP10M65DF2 amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGP10M65DF2 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGP10M65DF2


STGP10M65DF2 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGP10M65DF2 Description


The STGP10M65DF2 is an IGBT developed using an advanced proprietary trench gate field-stop structure. It is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.



STGP10M65DF2 Features


  • 6 μs of short-circuit withstand time

  • VCE(sat) = 1.55 V (typ.) @ IC = 10 A

  • Tight parameter distribution

  • Safer paralleling

  • Positive VCE(sat) temperature coefficient

  • Low thermal resistance

  • Soft and very fast recovery antiparallel diode

  • Maximum junction temperature: TJ = 175 °C



STGP10M65DF2 Applications


  • Motor control

  • UPS

  • PFC

  • General purpose inverter


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