SIE882DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Case Connection :

DRAIN SOURCE

Mount :

Surface Mount

Continuous Drain Current (ID) :

60A

Number of Terminations :

4

Number of Channels :

1

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

10

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

6400pF @ 12.5V

Pin Count :

10

Number of Elements :

1

Package / Case :

10-PolarPAK® (L)

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

25V

ECCN Code :

EAR99

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Power Dissipation-Max :

5.2W Ta 125W Tc

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 20A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

25V

FET Type :

N-Channel

Fall Time (Typ) :

85 ns

JESD-609 Code :

e3

Rise Time :

170ns

Turn On Delay Time :

45 ns

Peak Reflow Temperature (Cel) :

260

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

Turn-Off Delay Time :

65 ns

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

NO LEAD

JESD-30 Code :

R-PDSO-N4

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks