SIE810DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

800μm

Drain Current-Max (Abs) (ID) :

45A

Power Dissipation :

125mW

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Number of Channels :

1

Series :

TrenchFET®

Power Dissipation-Max :

5.2W Ta 125W Tc

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Rise Time :

70ns

Length :

6.15mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Case Connection :

DRAIN

Pin Count :

10

JESD-609 Code :

e3

Published :

2015

Turn On Delay Time :

20 ns

Package / Case :

10-PolarPAK® (L)

Number of Pins :

10

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Turn-Off Delay Time :

100 ns

Resistance :

20mOhm

Width :

5.16mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Mount :

Surface Mount

ECCN Code :

EAR99

Threshold Voltage :

1.3V

Number of Elements :

1

Transistor Element Material :

SILICON

JESD-30 Code :

R-XDSO-N4

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

60A

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Terminal Position :

Dual

Vgs (Max) :

±12V

Avalanche Energy Rating (Eas) :

36 mJ

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Factory Lead Time :

14 Weeks