SIE806DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Continuous Drain Current (ID) :

41.3A

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 15V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

5.2W Ta 125W Tc

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

60A

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Single

Pin Count :

10

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2016

Power Dissipation :

5.2W

Turn-Off Delay Time :

85 ns

Number of Pins :

10

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

4

Drain-source On Resistance-Max :

0.0021Ohm

Avalanche Energy Rating (Eas) :

125 mJ

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Package / Case :

10-PolarPAK® (L)

ECCN Code :

EAR99

Case Connection :

DRAIN

Terminal Finish :

PURE MATTE TIN

JESD-30 Code :

R-PDSO-N4

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V