SIE806DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Lead Free :

Lead Free

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

2V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Number of Pins :

10

Published :

2016

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±12V

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

202A

FET Type :

N-Channel

Pbfree Code :

yes

Threshold Voltage :

1.3V

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

ECCN Code :

EAR99

Rise Time :

50ns

Turn-Off Delay Time :

85 ns

Package / Case :

10-PolarPAK® (L)

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 15V

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 25A, 10V

Power Dissipation-Max :

5.2W Ta 125W Tc

Number of Elements :

1

Number of Terminations :

4

Resistance :

1.7MOhm

JESD-30 Code :

R-PDSO-N4

Radiation Hardening :

No

Power Dissipation :

5.2W

Fall Time (Typ) :

10 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Pin Count :

10