SIE816DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

5.2W Ta 125W Tc

Element Configuration :

Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Number of Elements :

1

Fall Time (Typ) :

10 ns

Published :

2016

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Power Dissipation :

5.2W

Supplier Device Package :

10-PolarPAK® (L)

Input Capacitance :

3.1nF

Continuous Drain Current (ID) :

19.8A

Drain to Source Resistance :

7.4mOhm

Drain to Source Voltage (Vdss) :

60V

Rds On Max :

7.4 mΩ

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Package / Case :

10-PolarPAK® (L)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchFET®

Number of Pins :

10

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Resistance :

7.4mOhm

Turn On Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7.4mOhm @ 19.8A, 10V

Drain to Source Breakdown Voltage :

60V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 30V