SIE802DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drain to Source Resistance :

1.9mOhm

Number of Pins :

10

Radiation Hardening :

No

Published :

2016

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Supplier Device Package :

10-PolarPAK® (L)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Power Dissipation-Max :

5.2W Ta 125W Tc

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Package / Case :

10-PolarPAK® (L)

Rds On Max :

1.9 mΩ

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Gate to Source Voltage (Vgs) :

20V

Input Capacitance :

7nF

Continuous Drain Current (ID) :

42.7A

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.9mOhm @ 23.6A, 10V

Min Operating Temperature :

-55°C