SIE818DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Published :

2017

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

80A

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 38V

JESD-30 Code :

R-XDSO-N4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 16A, 10V

Pin Count :

10

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drain Current-Max (Abs) (ID) :

79A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

9.5MOhm

Terminal Position :

Dual

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Number of Pins :

10

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

5.2W

JESD-609 Code :

e3

Element Configuration :

Single

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

Height :

800μm

Mounting Type :

Surface Mount

Power Dissipation-Max :

5.2W Ta 125W Tc

Gate to Source Voltage (Vgs) :

20V

Package / Case :

10-PolarPAK® (L)

Length :

6.15mm

Drain to Source Breakdown Voltage :

75V

Mount :

Surface Mount

Lead Free :

Lead Free

Case Connection :

DRAIN

Continuous Drain Current (ID) :

60A

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Width :

5.16mm

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Turn-Off Delay Time :

40 ns

Number of Channels :

1

Factory Lead Time :

14 Weeks

Rise Time :

15ns

ECCN Code :

EAR99