SIE800DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

80 mJ

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PDSO-N4

Number of Pins :

10

Mount :

Surface Mount

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 11A, 10V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Pbfree Code :

yes

Power Dissipation :

5.2W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Series :

TrenchFET®

Threshold Voltage :

2.2V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

50A

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Drain Current-Max (Abs) (ID) :

20.6A

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Rise Time :

15ns

Power Dissipation-Max :

5.2W Ta 104W Tc

Package / Case :

10-PolarPAK® (S)

Turn-Off Delay Time :

25 ns

Fall Time (Typ) :

10 ns

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

10

Resistance :

7.2mOhm