SIE804DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

150V

Series :

TrenchFET®

Power Dissipation-Max :

5.2W Ta 125W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Input Capacitance :

3nF

Drain to Source Breakdown Voltage :

150V

Mounting Type :

Surface Mount

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Power Dissipation :

5.2W

Continuous Drain Current (ID) :

37A

Number of Pins :

10

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 50V

Supplier Device Package :

10-PolarPAK® (LH)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rds On (Max) @ Id, Vgs :

38mOhm @ 7.6A, 10V

Published :

2016

Operating Temperature :

-55°C~150°C TJ

Package / Case :

10-PolarPAK® (LH)

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

38mOhm

Current - Continuous Drain (Id) @ 25°C :

37A Tc

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Rds On Max :

38 mΩ

Max Operating Temperature :

150°C