SIE812DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Power Dissipation-Max :

5.2W Ta 125W Tc

ECCN Code :

EAR99

Number of Pins :

10

Factory Lead Time :

14 Weeks

Published :

2008

Terminal Position :

Dual

Package / Case :

10-PolarPAK® (L)

Resistance :

2.6MOhm

Number of Channels :

1

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

5.2W

Pin Count :

10

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Application :

SWITCHING

Series :

TrenchFET®

Fall Time (Typ) :

10 ns

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Continuous Drain Current (ID) :

60A

Length :

6.15mm

JESD-30 Code :

R-XDSO-N4

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

60 ns

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

33A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Number of Terminations :

4

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

8300pF @ 20V

Height :

800μm

Lead Free :

Lead Free

Width :

5.16mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Element Configuration :

Single

Rise Time :

15ns

Pbfree Code :

yes

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

2.3V