SIE802DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

60A

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Mount :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

yes

Number of Channels :

1

Power Dissipation-Max :

5.2W Ta 125W Tc

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 15V

Height :

800μm

Turn-Off Delay Time :

65 ns

Width :

5.16mm

Factory Lead Time :

14 Weeks

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

42.7A

Transistor Application :

SWITCHING

Published :

2015

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 23.6A, 10V

Terminal Position :

Dual

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Resistance :

1.9mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Turn On Delay Time :

25 ns

Power Dissipation :

5.2W

Number of Terminations :

4

Case Connection :

DRAIN

Series :

TrenchFET®

Pin Count :

10

Package / Case :

10-PolarPAK® (L)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

Drain to Source Voltage (Vdss) :

30V

Rise Time :

20ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

10

Length :

6.15mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

JESD-30 Code :

R-XDSO-N4

Element Configuration :

Single

ECCN Code :

EAR99