SIE808DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

25 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-XDSO-N4

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 25A, 10V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

8800pF @ 10V

Transistor Application :

SWITCHING

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Threshold Voltage :

2.3V

Length :

6.15mm

Pin Count :

10

Number of Terminations :

4

Rise Time :

55ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

5.2W Ta 125W Tc

Continuous Drain Current (ID) :

60A

Package / Case :

10-PolarPAK® (L)

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Published :

2015

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Turn-Off Delay Time :

55 ns

Width :

5.16mm

Height :

800μm

Drain Current-Max (Abs) (ID) :

220A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Number of Pins :

10

ECCN Code :

EAR99

Resistance :

1.6mOhm

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Power Dissipation :

125mW