SIE810DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Element Configuration :

Single

Transistor Application :

SWITCHING

Terminal Position :

Dual

Power Dissipation-Max :

5.2W Ta 125W Tc

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0027Ohm

Rds On (Max) @ Id, Vgs :

1.4m Ω @ 25A, 10V

Number of Channels :

1

Radiation Hardening :

No

Number of Terminations :

4

Avalanche Energy Rating (Eas) :

36 mJ

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 10V

Package / Case :

10-PolarPAK® (L)

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

45A

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

Pin Count :

10

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Factory Lead Time :

14 Weeks

Series :

TrenchFET®

JESD-30 Code :

R-XDSO-N4

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

13000pF @ 10V

Number of Pins :

10

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Published :

2012

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)