SIE800DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Series :

TrenchFET®

Published :

2016

Pulsed Drain Current-Max (IDM) :

60A

Power Dissipation-Max :

5.2W Ta 104W Tc

Rise Time :

15ns

Drain-source On Resistance-Max :

0.0072Ohm

Continuous Drain Current (ID) :

20.6A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Pbfree Code :

yes

FET Type :

N-Channel

Pin Count :

10

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

7.2m Ω @ 11A, 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

80 mJ

DS Breakdown Voltage-Min :

30V

Element Configuration :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

4

Number of Pins :

10

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Terminal Finish :

PURE MATTE TIN

Package / Case :

10-PolarPAK® (S)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PDSO-N4

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING