SIE816DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

60A

Pulsed Drain Current-Max (IDM) :

60A

Number of Elements :

1

Power Dissipation :

5.2W

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

10ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Transistor Element Material :

SILICON

Terminal Finish :

PURE MATTE TIN

Series :

TrenchFET®

Vgs (Max) :

±20V

Published :

2016

Mount :

Surface Mount

Power Dissipation-Max :

5.2W Ta 125W Tc

Continuous Drain Current (ID) :

19.8A

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 30V

JESD-609 Code :

e3

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

125 mJ

Drain to Source Breakdown Voltage :

60V

Drain-source On Resistance-Max :

0.0074Ohm

Packaging :

Tape and Reel (TR)

Package / Case :

10-PolarPAK® (L)

Turn-Off Delay Time :

25 ns

Number of Terminations :

4

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

22 ns

JESD-30 Code :

R-XDSO-N4

Element Configuration :

Single

Terminal Position :

Dual

FET Type :

N-Channel

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 19.8A, 10V

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Number of Pins :

10

Pin Count :

10

Drive Voltage (Max Rds On,Min Rds On) :

10V