SIE878DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Mount :

Surface Mount

Number of Channels :

1

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

22 ns

JESD-609 Code :

e3

Terminal Position :

Dual

Number of Pins :

10

Qualification Status :

Not Qualified

Additional Feature :

ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 20A, 10V

JESD-30 Code :

R-PDSO-N4

Pin Count :

10

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Turn On Delay Time :

15 ns

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0068Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 12.5V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN SOURCE

Number of Terminations :

4

Package / Case :

10-PolarPAK® (L)

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

5.2W Ta 25W Tc

Transistor Application :

SWITCHING

Published :

2013

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

45A

Pbfree Code :

yes

Vgs (Max) :

±20V