SIE876DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PDSO-N4

Power Dissipation :

5.2W

Pbfree Code :

yes

Rise Time :

10ns

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

6.1m Ω @ 20A, 10V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 30V

Terminal Finish :

PURE MATTE TIN

Pulsed Drain Current-Max (IDM) :

60A

Case Connection :

DRAIN SOURCE

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Number of Terminations :

4

Pin Count :

10

Mount :

Surface Mount, Through Hole

Published :

2013

Transistor Element Material :

SILICON

Turn On Delay Time :

22 ns

Power Dissipation-Max :

5.2W Ta 125W Tc

Transistor Application :

SWITCHING

Number of Pins :

10

JESD-609 Code :

e3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

22A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

10-PolarPAK® (L)

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Number of Elements :

1

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

60mA

Turn-Off Delay Time :

25 ns

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®