SIE874DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

60 ns

Turn On Delay Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

6200pF @ 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Published :

2011

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

10

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Fall Time (Typ) :

30 ns

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

80 mJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

125W

Continuous Drain Current (ID) :

60A

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Pin Count :

10

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-N4

Drain Current-Max (Abs) (ID) :

52A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

35ns

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

1.17m Ω @ 20A, 10V

Package / Case :

10-PolarPAK® (L)

FET Type :

N-Channel

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Power Dissipation-Max :

5.2W Ta 125W Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0016Ohm

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING