SIE868DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 20A, 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

4

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

35A

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Fall Time (Typ) :

110 ns

Power Dissipation-Max :

5.2W Ta 125W Tc

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 20V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Turn-Off Delay Time :

65 ns

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Position :

Dual

Power Dissipation :

5.2W

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

10

Factory Lead Time :

15 Weeks

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0029Ohm

Rise Time :

165ns

Package / Case :

10-PolarPAK® (L)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

10

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

40V

Drain Current-Max (Abs) (ID) :

60A

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

JESD-30 Code :

R-XDSO-N4

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn On Delay Time :

40 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Published :

2016