SIE864DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1510pF @ 15V

Terminal Form :

NO LEAD

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Terminal Position :

Dual

FET Type :

N-Channel

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation-Max :

5.2W Ta 25W Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 20A, 10V

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

45A

Vgs (Max) :

±20V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

23A

Drain-source On Resistance-Max :

0.0073Ohm

JESD-30 Code :

R-PDSO-N4

RoHS Status :

ROHS3 Compliant

Pin Count :

10

Factory Lead Time :

21 Weeks

Terminal Finish :

PURE MATTE TIN

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Power Dissipation :

25W

Package / Case :

10-PolarPAK® (U)

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Pins :

10

Qualification Status :

Not Qualified

Series :

TrenchFET®

Avalanche Energy Rating (Eas) :

31 mJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN SOURCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V