SIE862DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

5.2W Ta 104W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

15 ns

JESD-30 Code :

R-PDSO-N4

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Number of Pins :

10

Operating Mode :

ENHANCEMENT MODE

Package / Case :

10-PolarPAK® (U)

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Dual

JESD-609 Code :

e3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 20A, 10V

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Number of Terminations :

4

Drain-source On Resistance-Max :

0.0038Ohm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

10

Radiation Hardening :

No

Continuous Drain Current (ID) :

50A

Turn On Delay Time :

30 ns

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 15V

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

30A

Mounting Type :

Surface Mount

Rise Time :

20ns

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Case Connection :

DRAIN SOURCE

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Pbfree Code :

yes

Turn-Off Delay Time :

40 ns

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

80 mJ

Gate to Source Voltage (Vgs) :

20V