SIE860DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Terminations :

4

Turn-Off Delay Time :

50 ns

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Continuous Drain Current (ID) :

38A

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Number of Pins :

10

Transistor Application :

SWITCHING

Turn On Delay Time :

35 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 21.7A, 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation :

5.2W

Pbfree Code :

yes

Package / Case :

10-PolarPAK® (M)

Drain Current-Max (Abs) (ID) :

60A

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Pin Count :

10

Power Dissipation-Max :

5.2W Ta 104W Tc

Fall Time (Typ) :

30 ns

Rise Time :

20ns

JESD-30 Code :

R-XDSO-N4

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Series :

TrenchFET®

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Radiation Hardening :

No

JESD-609 Code :

e3