SIE860DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

50 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 15V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

105nC @ 10V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

80A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

5.2W Ta 104W Tc

Number of Pins :

10

FET Type :

N-Channel

JESD-30 Code :

R-XDSO-N4

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

38A

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 21.7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Series :

TrenchFET®

Rise Time :

20ns

Package / Case :

10-PolarPAK® (M)

Terminal Finish :

PURE MATTE TIN

Avalanche Energy Rating (Eas) :

125 mJ

JESD-609 Code :

e3

Fall Time (Typ) :

30 ns

Power Dissipation :

5.2W

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Pin Count :

10

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain Current-Max (Abs) (ID) :

60A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0021Ohm

Turn On Delay Time :

35 ns

Transistor Element Material :

SILICON