SIE854DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Turn-Off Delay Time :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Peak Reflow Temperature (Cel) :

260

Series :

TrenchFET®

Power Dissipation :

5.2W

Number of Pins :

10

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

Package / Case :

10-PolarPAK® (L)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-N4

Pbfree Code :

yes

Transistor Application :

SWITCHING

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

80 mJ

Case Connection :

DRAIN

Fall Time (Typ) :

10 ns

Pin Count :

10

Power Dissipation-Max :

5.2W Ta 125W Tc

Rds On (Max) @ Id, Vgs :

14.2m Ω @ 13.2A, 10V

Drain Current-Max (Abs) (ID) :

60A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Published :

2009

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Terminal Finish :

PURE MATTE TIN

Rise Time :

10ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Mount :

Surface Mount

Continuous Drain Current (ID) :

13.2A

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

60A

Radiation Hardening :

No

Vgs (Max) :

±20V