SIE854DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Rds On Max :

14.2 mΩ

Lead Free :

Lead Free

Continuous Drain Current (ID) :

13.2A

Package / Case :

10-PolarPAK® (L)

Number of Elements :

1

Power Dissipation :

5.2W

Rds On (Max) @ Id, Vgs :

14.2mOhm @ 13.2A, 10V

Resistance :

14.2MOhm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Supplier Device Package :

10-PolarPAK® (L)

Number of Pins :

10

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Published :

2014

Rise Time :

10ns

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2.5V

Termination :

SMD/SMT

Input Capacitance :

3.1nF

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

100V

Series :

TrenchFET®

Min Operating Temperature :

-50°C

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

30 ns

Power Dissipation-Max :

5.2W Ta 125W Tc

Drain to Source Resistance :

14.2MOhm