SIE848DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

70 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

5.2W Ta 125W Tc

Drain-source On Resistance-Max :

0.0022Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Series :

TrenchFET®

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

FET Type :

N-Channel

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Published :

2013

Threshold Voltage :

1.8V

Power Dissipation :

125W

Number of Terminations :

4

Turn On Delay Time :

45 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN SOURCE

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Fall Time (Typ) :

40 ns

Pbfree Code :

yes

Number of Pins :

10

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Pin Count :

10

Nominal Vgs :

1.8 V

Package / Case :

10-PolarPAK® (L)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

43A

REACH SVHC :

Unknown

JESD-30 Code :

R-PDSO-N4

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 15V

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 25A, 10V

Transistor Element Material :

SILICON