SIE844DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Continuous Drain Current (ID) :

20.3A

JESD-30 Code :

R-XDSO-N4

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 15V

Rise Time :

10ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Pin Count :

10

Power Dissipation-Max :

5.2W Ta 25W Tc

Number of Terminations :

4

Package / Case :

10-PolarPAK® (U)

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

7m Ω @ 12.1A, 10V

Published :

2016

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

31 mJ

Pulsed Drain Current-Max (IDM) :

60A

Drain-source On Resistance-Max :

0.007Ohm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

44.5A

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ULTRA-LOW RESISTANCE

Series :

TrenchFET®

Element Configuration :

Single

Mount :

Surface Mount

Number of Pins :

10

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Terminal Position :

Dual

Turn On Delay Time :

25 ns

Terminal Finish :

PURE MATTE TIN

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

44.5A Tc