SIE844DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Number of Pins :

10

Drain-source On Resistance-Max :

0.007Ohm

Published :

2008

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

31 mJ

JESD-609 Code :

e3

Terminal Finish :

PURE MATTE TIN

Terminal Position :

Dual

Transistor Application :

SWITCHING

Package / Case :

10-PolarPAK® (U)

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Series :

TrenchFET®

Power Dissipation-Max :

5.2W Ta 25W Tc

Current - Continuous Drain (Id) @ 25°C :

44.5A Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Number of Elements :

1

Termination :

SMD/SMT

Continuous Drain Current (ID) :

44.5A

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

3V

Turn On Delay Time :

25 ns

Rds On (Max) @ Id, Vgs :

7m Ω @ 12.1A, 10V

Pbfree Code :

yes

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

4

REACH SVHC :

No SVHC

Power Dissipation :

5.2W

Rise Time :

10ns

Nominal Vgs :

3 V

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-30 Code :

R-XDSO-N4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Pin Count :

10

Dual Supply Voltage :

30V

Pulsed Drain Current-Max (IDM) :

60A

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

2150pF @ 15V

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99