SIE836DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

200V

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 100V

Avalanche Energy Rating (Eas) :

1.25 mJ

Drain-source On Resistance-Max :

0.13Ohm

JESD-30 Code :

R-PDSO-N4

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

130m Ω @ 4.1A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

10

Element Configuration :

Single

Power Dissipation-Max :

5.2W Ta 104W Tc

JESD-609 Code :

e3

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

18.3A Tc

FET Type :

N-Channel

Number of Terminations :

4

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

18.3A

Turn On Delay Time :

15 ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

4.1A

Pbfree Code :

yes

Case Connection :

DRAIN SOURCE

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Rise Time :

10ns

Mount :

Surface Mount

Vgs (Max) :

±30V

Power Dissipation :

5.2W

Number of Elements :

1

Series :

TrenchFET®

Number of Pins :

10

Turn-Off Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

15A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

10-PolarPAK® (SH)

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Transistor Application :

SWITCHING