SIE832DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 20V

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

40V

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

55 ns

Number of Elements :

1

Turn On Delay Time :

45 ns

Rise Time :

260ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Continuous Drain Current (ID) :

23.6A

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-N4

FET Type :

N-Channel

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Series :

TrenchFET®

Number of Pins :

10

Turn-Off Delay Time :

35 ns

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 14A, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Channels :

1

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pin Count :

10

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

80A

Drain-source On Resistance-Max :

0.0055Ohm

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Factory Lead Time :

12 Weeks

Package / Case :

10-PolarPAK® (S)

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

JESD-609 Code :

e3

Power Dissipation-Max :

5.2W Ta 104W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Tc