SIE832DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

45 ns

JESD-609 Code :

e3

Published :

2011

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

23.6A

Package / Case :

10-PolarPAK® (S)

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

80A

Terminal Finish :

Matte Tin (Sn)

Width :

5.16mm

Transistor Element Material :

SILICON

Number of Terminations :

4

JESD-30 Code :

R-PDSO-N4

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Resistance :

5.5mOhm

Pin Count :

10

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 20V

Lead Free :

Lead Free

Series :

TrenchFET®

Mounting Type :

Surface Mount

Turn-Off Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

Number of Elements :

1

Power Dissipation-Max :

5.2W Ta 104W Tc

Element Configuration :

Single

Pbfree Code :

yes

Height :

800μm

Length :

6.15mm

RoHS Status :

ROHS3 Compliant

Power Dissipation :

5.2W

Fall Time (Typ) :

55 ns

Continuous Drain Current (ID) :

50A

REACH SVHC :

No SVHC

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Transistor Application :

SWITCHING

Number of Pins :

10

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 14A, 10V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.2V

Rise Time :

260ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260