SIE830DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

70 ns

Rise Time :

105ns

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2016

Drain to Source Breakdown Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Turn On Delay Time :

35 ns

Vgs (Max) :

±12V

Power Dissipation-Max :

5.2W Ta 104W Tc

Radiation Hardening :

No

Fall Time (Typ) :

95 ns

Package / Case :

10-PolarPAK® (S)

Series :

WFET®

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 16A, 10V

Drain Current-Max (Abs) (ID) :

50A

Number of Pins :

10

FET Type :

N-Channel

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

27A

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

2V @ 250μA

Power Dissipation :

5.2W