SIE830DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

105ns

FET Type :

N-Channel

Power Dissipation-Max :

5.2W Ta 104W Tc

Drain-source On Resistance-Max :

0.0042Ohm

Number of Terminations :

5

Published :

2016

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Turn-Off Delay Time :

70 ns

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

12V

Series :

WFET®

Vgs (Max) :

±12V

Avalanche Energy Rating (Eas) :

45 mJ

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

27A

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Turn On Delay Time :

35 ns

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

50A

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

10-PolarPAK® (S)

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

ECCN Code :

EAR99

Pbfree Code :

yes

JESD-30 Code :

R-PDSO-N5

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Transistor Element Material :

SILICON

Fall Time (Typ) :

95 ns

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

80A

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 16A, 10V

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Pins :

10

Pin Count :

10

Mount :

Surface Mount