SIE822DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

78nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 10V

Number of Pins :

10

Drain Current-Max (Abs) (ID) :

50A

Published :

2008

JESD-609 Code :

e3

JESD-30 Code :

R-XDSO-N4

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

35 ns

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Power Dissipation-Max :

5.2W Ta 104W Tc

Avalanche Energy Rating (Eas) :

45 mJ

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Matte Tin (Sn)

Number of Channels :

1

Drain-source On Resistance-Max :

0.0034Ohm

Series :

TrenchFET®

Pin Count :

10

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 18.3A, 10V

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Package / Case :

10-PolarPAK® (S)

Pulsed Drain Current-Max (IDM) :

80A

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

31A

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

yes