SIE820DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 10V

Avalanche Energy Rating (Eas) :

45 mJ

Terminal Position :

Dual

Power Dissipation :

5.2W

Drain-source On Resistance-Max :

0.0035Ohm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pulsed Drain Current-Max (IDM) :

80A

JESD-30 Code :

R-XDSO-N4

Number of Terminations :

4

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

10

Peak Reflow Temperature (Cel) :

260

Pin Count :

10

Case Connection :

DRAIN

Series :

TrenchFET®

Transistor Application :

SWITCHING

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 18A, 4.5V

Drain to Source Breakdown Voltage :

20V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

143nC @ 10V

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

30A

Power Dissipation-Max :

5.2W Ta 104W Tc

Element Configuration :

Single

Published :

2016

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

50A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±12V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Package / Case :

10-PolarPAK® (S)

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Time@Peak Reflow Temperature-Max (s) :

30