SIE820DF-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0035Ohm

Number of Terminations :

4

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Avalanche Energy Rating (Eas) :

45 mJ

JESD-609 Code :

e3

Mount :

Surface Mount

Series :

TrenchFET®

Number of Pins :

10

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 18A, 4.5V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

55 ns

Fall Time (Typ) :

10 ns

Pbfree Code :

yes

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

143nC @ 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

4300pF @ 10V

Published :

2011

Continuous Drain Current (ID) :

50A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

20V

Power Dissipation-Max :

5.2W Ta 104W Tc

Terminal Finish :

Matte Tin (Sn)

Pin Count :

10

Pulsed Drain Current-Max (IDM) :

80A

Element Configuration :

Single

Package / Case :

10-PolarPAK® (S)

Drain Current-Max (Abs) (ID) :

136A

Case Connection :

DRAIN

Rise Time :

35ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-XDSO-N4

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Transistor Application :

SWITCHING

Vgs (Max) :

±12V