SIE818DF-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Package / Case :

10-PolarPAK® (L)

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 16A, 10V

Turn On Delay Time :

30 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

79A

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 38V

Fall Time (Typ) :

15 ns

Pulsed Drain Current-Max (IDM) :

80A

Pin Count :

10

Number of Terminations :

4

Terminal Position :

Dual

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

14 Weeks

Power Dissipation :

5.2W

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

40 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

75V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2015

Number of Channels :

1

Number of Pins :

10

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Terminal Finish :

PURE MATTE TIN

Power Dissipation-Max :

5.2W Ta 125W Tc

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Continuous Drain Current (ID) :

16A

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain-source On Resistance-Max :

0.0095Ohm

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Rise Time :

150ns

JESD-30 Code :

R-XDSO-N4

ECCN Code :

EAR99

Mounting Type :

Surface Mount