SI7844DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Packaging :

Cut Tape (CT)

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Package / Case :

PowerPAK® SO-8 Dual

Terminal Form :

C BEND

Lead Free :

Lead Free

Rise Time :

10ns

Terminal Finish :

Matte Tin (Sn)

Nominal Vgs :

2.4 V

Min Operating Temperature :

-55°C

Base Part Number :

SI7844

Drain to Source Breakdown Voltage :

30V

Case Connection :

DRAIN

Number of Elements :

2

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Fall Time (Typ) :

10 ns

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

2.4V @ 250μA

JESD-30 Code :

R-XDSO-C6

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

21 ns

Threshold Voltage :

2.4V

Continuous Drain Current (ID) :

10A

Pin Count :

8

Max Power Dissipation :

1.4W

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

JESD-609 Code :

e3

Turn On Delay Time :

8 ns

Width :

5mm

Current - Continuous Drain (Id) @ 25°C :

6.4A

Mounting Type :

Surface Mount

Height :

1.07mm

ECCN Code :

EAR99

Length :

5.99mm

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

30V

Power Dissipation :

1.4W

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Number of Terminations :

6

Max Operating Temperature :

150°C

Resistance :

22mOhm

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

22m Ω @ 10A, 10V

FET Feature :

Logic Level Gate

Published :

2009

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

6.4A