SI7818DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Width :

3.05mm

Published :

2007

Series :

TrenchFET®

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

2.2A

Rds On (Max) @ Id, Vgs :

135m Ω @ 3.4A, 10V

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Package / Case :

PowerPAK® 1212-8

Threshold Voltage :

4V

ECCN Code :

EAR99

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

4 mJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Rise Time :

10ns

JESD-30 Code :

R-XDSO-C5

Height :

1.04mm

Number of Terminations :

5

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drain to Source Voltage (Vdss) :

150V

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.4A

Power Dissipation :

1.5W

Turn-Off Delay Time :

25 ns

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

Length :

3.05mm

Number of Channels :

1

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

135mOhm

Element Configuration :

Single

Case Connection :

DRAIN