SI7818DN-T1-E3
- Mfr.Part #
- SI7818DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 2.2A PPAK1212-8
- Stock
- 10,563
- In Stock :
- 10,563
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Series :
- TrenchFET®
- Factory Lead Time :
- 14 Weeks
- Fall Time (Typ) :
- 10 ns
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 3.4A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Avalanche Energy Rating (Eas) :
- 4 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Position :
- Dual
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Turn On Delay Time :
- 10 ns
- Power Dissipation :
- 1.5W
- Power Dissipation-Max :
- 1.5W Ta
- Package / Case :
- PowerPAK® 1212-8
- REACH SVHC :
- Unknown
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 4V
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-XDSO-C5
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 25 ns
- Pbfree Code :
- yes
- Terminal Form :
- C BEND
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 150V
- Published :
- 2007
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Width :
- 3.05mm
- Resistance :
- 135mOhm
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 10ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Terminal Finish :
- Matte Tin (Sn)
- Height :
- 1.04mm
- Number of Terminations :
- 5
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current (ID) :
- 3.4A
- Length :
- 3.05mm
- Datasheets
- SI7818DN-T1-E3
N-Channel Tape & Reel (TR) 135m Ω @ 3.4A, 10V ±20V 30nC @ 10V 150V PowerPAK® 1212-8
SI7818DN-T1-E3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4 mJ.This device has a continuous drain current (ID) of [3.4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 2.2A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).
SI7818DN-T1-E3 Features
the avalanche energy rating (Eas) is 4 mJ
a continuous drain current (ID) of 3.4A
the turn-off delay time is 25 ns
a threshold voltage of 4V
a 150V drain to source voltage (Vdss)
SI7818DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7818DN-T1-E3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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