SI7820DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Width :

3.05mm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

0.6 mJ

Continuous Drain Current (ID) :

2.6A

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Resistance :

240mOhm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

S-XDSO-C5

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Drain to Source Voltage (Vdss) :

200V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.04mm

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

200V

Terminal Position :

Dual

Number of Pins :

8

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Length :

3.05mm

Number of Terminations :

5

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.6A, 10V

Lead Free :

Lead Free

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Rise Time :

12ns

JESD-609 Code :

e3

Package / Case :

PowerPAK® 1212-8

Power Dissipation-Max :

1.5W Ta

Turn-Off Delay Time :

30 ns

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.5W

Mounting Type :

Surface Mount

Turn On Delay Time :

11 ns

Element Configuration :

Single

Terminal Form :

C BEND

Pin Count :

8

Transistor Element Material :

SILICON

ECCN Code :

EAR99