SI7840BDP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0085Ohm

Fall Time (Typ) :

14 ns

Mount :

Surface Mount

Power Dissipation-Max :

1.8W Ta

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 16.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

15 Weeks

Turn-Off Delay Time :

39 ns

Package / Case :

PowerPAK® SO-8

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Weight :

506.605978mg

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

11A

Rise Time :

14ns

JESD-609 Code :

e3

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

C BEND

Number of Terminations :

5

Turn On Delay Time :

17 ns

Terminal Position :

Dual

FET Type :

N-Channel

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Channels :

1

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Number of Elements :

1

JESD-30 Code :

R-PDSO-C5

Pulsed Drain Current-Max (IDM) :

50A

Avalanche Energy Rating (Eas) :

20 mJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA