SI7802DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

0.3 mJ

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

8A

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

435m Ω @ 1.95A, 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.435Ohm

JESD-609 Code :

e3

Series :

TrenchFET®

Package / Case :

PowerPAK® 1212-8

Number of Terminations :

5

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Fall Time (Typ) :

10 ns

Power Dissipation :

1.5W

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

250V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

8

Rise Time :

10ns

Continuous Drain Current (ID) :

1.24A

Published :

2013

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.5W Ta

Turn-Off Delay Time :

21 ns

Threshold Voltage :

2.4V

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

S-XDSO-C5

Current - Continuous Drain (Id) @ 25°C :

1.24A Ta

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

10 ns

Terminal Form :

C BEND

Terminal Position :

Dual