SI7820DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Length :

3.05mm

Radiation Hardening :

No

REACH SVHC :

Unknown

Avalanche Energy Rating (Eas) :

0.6 mJ

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.6A

Package / Case :

PowerPAK® 1212-8

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Form :

C BEND

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.5W

Rise Time :

12ns

Published :

2005

Turn-Off Delay Time :

30 ns

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.24Ohm

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Height :

1.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Number of Terminations :

5

Case Connection :

DRAIN

Width :

3.05mm

Threshold Voltage :

4V

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation-Max :

1.5W Ta

Pin Count :

8

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

S-XDSO-C5

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

200V

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Vgs (Max) :

±20V

Lead Free :

Lead Free