SI7820DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Power Dissipation-Max :

1.5W Ta

Terminal Form :

C BEND

Published :

2005

Turn-Off Delay Time :

30 ns

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Number of Pins :

8

ECCN Code :

EAR99

Element Configuration :

Single

Vgs (Max) :

±20V

Fall Time (Typ) :

12 ns

Factory Lead Time :

14 Weeks

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

200V

Peak Reflow Temperature (Cel) :

260

Rise Time :

12ns

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.24Ohm

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

S-XDSO-C5

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mounting Type :

Surface Mount

Pbfree Code :

yes

Radiation Hardening :

No

Transistor Application :

SWITCHING

Series :

TrenchFET®

Length :

3.05mm

FET Type :

N-Channel

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

3.05mm

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

2.6A

Height :

1.04mm

Number of Channels :

1

Lead Free :

Lead Free

Power Dissipation :

1.5W

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

0.6 mJ

REACH SVHC :

Unknown

Rds On (Max) @ Id, Vgs :

240m Ω @ 2.6A, 10V

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® 1212-8

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V