SI7802DN-T1-E3
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- Mfr.Part #
- SI7802DN-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 1.24A PPAK
- Stock
- 7,441
- In Stock ：
- 7,441
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 250V
- Vgs(th) (Max) @ Id :
- 3.6V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 435 mΩ
- Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 435mOhm @ 1.95A, 10V
- Series :
- TrenchFET®
- Current - Continuous Drain (Id) @ 25°C :
- 1.24A Ta
- Drain to Source Breakdown Voltage :
- 250V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Fall Time (Typ) :
- 10 ns
- Element Configuration :
- Single
- Published :
- 2011
- Rise Time :
- 10ns
- Threshold Voltage :
- 3.6V
- Turn-Off Delay Time :
- 21 ns
- Package / Case :
- PowerPAK® 1212-8
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Supplier Device Package :
- PowerPAK® 1212-8
- Power Dissipation-Max :
- 1.5W Ta
- Mount :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Number of Pins :
- 8
- Drain to Source Resistance :
- 435mOhm
- Resistance :
- 435mOhm
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Max Operating Temperature :
- 150°C
- Continuous Drain Current (ID) :
- 19.5A
- Datasheets
- SI7802DN-T1-E3
N-Channel Tape & Reel (TR) 435mOhm @ 1.95A, 10V ±20V 21nC @ 10V 250V PowerPAK® 1212-8
SI7802DN-T1-E3 Overview
Its continuous drain current is 19.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 21 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 435mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 3.6V.To operate this transistor, you need to apply a 250V drain to source voltage (Vdss).This device uses no drive voltage (6V 10V) to reduce its overall power consumption.
SI7802DN-T1-E3 Features
a continuous drain current (ID) of 19.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 435mOhm
a threshold voltage of 3.6V
a 250V drain to source voltage (Vdss)
SI7802DN-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7802DN-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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