SI7802DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

250V

Vgs(th) (Max) @ Id :

3.6V @ 250µA

Supplier Device Package :

PowerPAK® 1212-8

Resistance :

435mOhm

RoHS Status :

ROHS3 Compliant

Drain to Source Resistance :

435mOhm

Current - Continuous Drain (Id) @ 25°C :

1.24A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

21 ns

Drain to Source Voltage (Vdss) :

250V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Max Operating Temperature :

150°C

Number of Elements :

1

Threshold Voltage :

3.6V

Turn On Delay Time :

10 ns

Mount :

Surface Mount

Lead Free :

Lead Free

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

435mOhm @ 1.95A, 10V

Fall Time (Typ) :

10 ns

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Rise Time :

10ns

Package / Case :

PowerPAK® 1212-8

Power Dissipation-Max :

1.5W Ta

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Rds On Max :

435 mΩ

Radiation Hardening :

No

Power Dissipation :

1.5W

Continuous Drain Current (ID) :

19.5A

REACH SVHC :

No SVHC

Series :

TrenchFET®

Vgs (Max) :

±20V