SI7812DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Height :

1.12mm

Terminal Form :

C BEND

Mounting Type :

Surface Mount

Mount :

Surface Mount

Published :

2013

Number of Elements :

1

Transistor Element Material :

SILICON

Turn On Delay Time :

15 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

7.2A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn-Off Delay Time :

35 ns

Rds On (Max) @ Id, Vgs :

37m Ω @ 7.2A, 10V

Number of Channels :

1

Number of Pins :

8

Vgs (Max) :

±20V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Resistance :

37mOhm

Threshold Voltage :

1V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Pin Count :

8

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 35V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

S-XDSO-C5

Gate to Source Voltage (Vgs) :

20V

Width :

3.05mm

Power Dissipation :

3.8W

Series :

TrenchFET®

Max Junction Temperature (Tj) :

150°C

Length :

3.05mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

75V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 52W Tc

Package / Case :

PowerPAK® 1212-8

Pbfree Code :

yes

Rise Time :

20ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

25A

Fall Time (Typ) :

10 ns

Terminal Position :

Dual