SI7806ADN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

8

Pin Count :

8

Drain Current-Max (Abs) (ID) :

9A

JESD-609 Code :

e3

Number of Terminations :

5

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

40A

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2017

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Case Connection :

DRAIN

Continuous Drain Current (ID) :

9A

Terminal Position :

Dual

Package / Case :

PowerPAK® 1212-8

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.5W Ta

Number of Channels :

1

Power Dissipation :

1.5W

Mount :

Surface Mount

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

JESD-30 Code :

S-XDSO-C5

Rise Time :

10ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Series :

TrenchFET®

Contact Plating :

Tin

Length :

3.05mm

Fall Time (Typ) :

10 ns

Height :

1.04mm

Turn On Delay Time :

13 ns

Turn-Off Delay Time :

33 ns

Rds On (Max) @ Id, Vgs :

11m Ω @ 14A, 10V

Width :

3.05mm

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

3V @ 250µA