SI7806ADN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Pin Count :

8

Number of Terminations :

5

Power Dissipation-Max :

1.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Width :

3.05mm

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

10 ns

Number of Pins :

8

ECCN Code :

EAR99

JESD-30 Code :

S-XDSO-C5

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Package / Case :

PowerPAK® 1212-8

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Series :

TrenchFET®

Height :

1.04mm

Turn On Delay Time :

13 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.5W

Length :

3.05mm

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

11m Ω @ 14A, 10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

FET Type :

N-Channel

Case Connection :

DRAIN

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

9A

Mounting Type :

Surface Mount

Published :

2017

Drain Current-Max (Abs) (ID) :

9A

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

40A

Contact Plating :

Tin

Rise Time :

10ns

Number of Channels :

1

Radiation Hardening :

No